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Optical Properties of Pseudomorphic SnXGe1-x Alloys

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Abstract

SnxGe1-x alloys are grown coherent on Ge(001) substrates by conventional molecular beam epitaxy. The lattice mismatch between SnxGe1-x and Ge produces a biaxial compression of the alloy in the plane of the substrate and a uniaxial elongation in the growth direction. The change of Eg resulting from the biaxial compression is modeled with deformation potential theory for coherent SnxGe1-x on Ge(001) and coherent SnxGe1-x on Ge(111). For SnxGe1-x on Ge(001), the decrease in the energy band gap due to strain is small, 16 meV for x = 0.10, and G7 and L6 shift uniformly. In the case of SnxGe1-x on Ge(111), G7 and L6 do not shift uniformly; a large uniaxial splitting occurs at L6, 200 meV for x = 0.10. Another interesting result of a uniaxial strain along [111] is the absence of a direct to indirect energy band gap transition for x < 0.30. Fourier transform infrared spectroscopy transmission measurements of coherent SnxGe1-x on Ge(001) confirm the strain-induced change in the energy band gap is a small effect.

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Authors and Affiliations

  1. Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA, 91125, USA

    Regina Ragan & Harry A. Atwater

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  1. Regina Ragan
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  2. Harry A. Atwater
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Correspondence to Regina Ragan.

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Ragan, R., Atwater, H.A. Optical Properties of Pseudomorphic SnXGe1-x Alloys. MRS Online Proceedings Library 588, 199 (1999). https://doi.org/10.1557/PROC-588-199

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  • DOI: https://doi.org/10.1557/PROC-588-199

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