Abstract
Large grain (> 10 um) poly-Si film has been formed from nickel Metal Induced Lateral Crystallization (MILC) and subsequent high temperature annealing. The fabricated thin film transistors (TFT) have near SOI performance. The new technology has good potential to provide low cost SOI substrates, multi-layer devices and other novel applications.
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Yuen, C.Y., Poon, M.C., Chan, M. et al. SOI Formation from Amorphous Silicon by Novel Gain Enhancement Method. MRS Online Proceedings Library 587, 82 (1999). https://doi.org/10.1557/PROC-587-O8.2
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DOI: https://doi.org/10.1557/PROC-587-O8.2