Abstract
Migration-Enhanced Epitaxy (MEE) has been successfully employed to grow epitaxial films of the ternary compound CuInSe2 on (001) GaAs that are ordered in a CuAu crystallographic structure rather than the compound’s equilibrium chalcopyrite structure. Evidence for this structural polytype is provided by XRD, TEM–TED, and Raman scattering data. Film growth under the conditions employed for this study occurs in a Stranski-Krastanov mode. The effects of growth system parameters and overall stoichiometry on 3–D island formation are described, including our observation that ordering of those islands into quasiperiodic self-assembled arrays occurs only in the case of nonstoichiometric copper excess.
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Stanbery, B.J., Chang, CH., Kim, S. et al. Epitaxial Growth of CuAu-Ordered CuInSe2 Structural Polytypes by Migration Enhanced Epitaxy. MRS Online Proceedings Library 583, 195–200 (1999). https://doi.org/10.1557/PROC-583-195
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DOI: https://doi.org/10.1557/PROC-583-195