Abstract
The liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in-situ experiments combining time-resolved (~Ins) electrical conductance, optical reflectance/transmittance at visible and near-IR wavelength, and thermal emission measurements. The existence of partial and complete melting regimes is elucidated. In the partial melting regime, the maximum temperature remains close to the melting point of aSi, since the laser energy is consumed on the latent heat of phase-change. In the complete melting regime, substantial supercooling, followed by homogeneous nucleation is observed. These phase transformations are consistent with the recrystallized poly-Si morphologies.
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J.S. Im, R.S. Sposili, and M.A. Crowder, Apply. Phys. Lett. 70, 3434 (1997).
H.J. Kim and J.S. Im, MRS Symp., Proc., 697, 401 (1996).
G. Aighmayre, D. Toet, M. Mulato, P.V. Santos, A. Spangerberg, S. Chreistiansen, M. Albrecht, and H.P. Strunk, Phy. Stat. sol. (a) 166, 659(1998).
R. Ishihara and M. Matsumura, Jpn. J. Appl. Phys. 36, 6167 (1998).
G. Groos nad M. Stutzmann, J. Non-Crystal solids 227, 938 (1998).
V.V. Gupta, H.J. Song, and J.S. Im, Apply. Phus. Lett. 71, 99 (1997).
R.F. Wood and G.A. Geist, Phys. Rev., Lett. 57, 873 (1986).
S.R. Stiffeler and M.O. Thompson, Phys. Rev., Lett. 60, 2519 (1988).
E.E. Jellison, D.H. Lowndes, D.N. Mashburn, and R. F. Wood, Phys. Rev. B 26 2111(1986).
X. Xu, R.E. Russo, and C.P. Grigoropoulos, Appl. Phys. A 62, 51 (1996).
S.J. Moon, M.H. Lee, M. Hatano, K. Suzuki, and C.P. Grigoropoulos, to be published SPIE.
V.M. Galzov, S.N. Chizhevskays, and N.N. Glagoleva, Liquid semiconductor, Plenum, New York (1969).
K. Murakami, O. Eryu, K. Takita, and K. Masuda, Phys. Rev., Lett. 59, 2519 (1987).
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Hatano, M., Moon, S., Lee, M. et al. Melting and resolidification dynamics of a-Si and poly-Si thin films during excimer laser annealing. MRS Online Proceedings Library 558, 193–198 (1999). https://doi.org/10.1557/PROC-558-193
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DOI: https://doi.org/10.1557/PROC-558-193