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Integrated Amorphous and Polycrystalline Silicon TFTs with a Single Silicon Layer

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Abstract

Selective exposure of an a-Si:H film to a room temperature hydrogen plasma using a patterned SiNx, capping layer and a subsequent anneal at 600°C, resulted in polycrystalline and amorphous silicon regions in a single silicon layer on the same glass substrate. Top-gate non-self-aligned TFTs were fabricated in both the amorphous and polycrystalline regions with all shared processing steps and no laser processing using a re-hydrogenation step. The TFTs had good characteristics, with field-effect mobilities upto 1.2 cm2/Vs and 15 cm2/Vs for the a-Si:H and the poly-Si TFTs, respectively, and ON/OFF ratios >105 in either case.

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Authors and Affiliations

  1. Dept. of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA

    K. Pangal, Y. Chen, J. C. Sturm & S. Wagner

Authors
  1. K. Pangal
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  2. Y. Chen
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  3. J. C. Sturm
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  4. S. Wagner
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Pangal, K., Chen, Y., Sturm, J.C. et al. Integrated Amorphous and Polycrystalline Silicon TFTs with a Single Silicon Layer. MRS Online Proceedings Library 557, 629–634 (1999). https://doi.org/10.1557/PROC-557-629

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  • DOI: https://doi.org/10.1557/PROC-557-629

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