Abstract
We observe an increase of the low-temperature internal friction of hydrogenated amorphous silicon prepared by both hot-wire and plasma-enhanced chemical-vapor deposition after extended light-soaking at room temperature. This increase, and the associated change in sound velocity, can be explained by an increase of the density of two-level tunneling states, which serves as a measure of the lattice disorder. The amount of increase in internal friction is remarkably similar in both types of films although the amount and the microstructure of hydrogen are very different. Experiments conducted on a sample prepared by hot-wire chemical-vapor deposition show that this change anneals out gradually at room temperature in about 70 days. Possible relation of the light-induced changes in the low-temperature elastic properties to the Staebler-Wronski effect is discussed.
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Liu, X., Pohl, R.O. & Crandall, R.S. Light-Induced Increase in Two-Level Tunneling States in Hydrogenated Amorphous Silicon. MRS Online Proceedings Library 557, 389–394 (1999). https://doi.org/10.1557/PROC-557-389
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DOI: https://doi.org/10.1557/PROC-557-389