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Carrier Transport and Velocity Overshoot in Strained Si on Sige Heterostructures

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Abstract

We examine the velocity overshoot effect in strained Six on Six-Ge1-x heterostructures. We also investigate the performance of surface-channel strained-Si MOSFETs for devices with gate lengths representative of the state-of-the-art technology. The Ensemble Monte Carlo method, self-consistently coupled with the 2D Poisson equation solver, is used in the investigation of the device performance. Our simulations suggest that, in short-channel devices, velocity overshoot is very important. In fact, when velocity overshoot occurs, it greatly affects the carrier dynamics and the current enhancement factor of both surface-channel strained-Si and conventional Si MOSFETs.

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Authors and Affiliations

  1. Department of Electrical Engineering, Arizona State University, Tempe, AZ, 85287-5706, USA

    David K. Ferry & Dragica Vasileska

  2. Motorola SPS, 2100 E.Elliot Road, Tempe, AZ, 85284, USA

    Gabriele Formicone

Authors
  1. David K. Ferry
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  2. Gabriele Formicone
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  3. Dragica Vasileska
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Ferry, D.K., Formicone, G. & Vasileska, D. Carrier Transport and Velocity Overshoot in Strained Si on Sige Heterostructures. MRS Online Proceedings Library 533, 31–42 (1998). https://doi.org/10.1557/PROC-533-31

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