Abstract
Among the various external disturbances used in the study of semiconductors, including electric and magnetic fields as well as uniaxial pressure, large hydrostatic pressures can be employed to induce dramatic changes in host lattice, dopant and defect properties. Diamond anvil cells with an appropriate pressure medium (e.g. liquid N2 or alcohol mixtures) allow the application of pressures up to hundreds of kbar. In this pressure range the global conduction band minimum of a semiconductor can become a local minimum. GaAs for example changes near 45 kbar from a direct (Г-band) to an indirect (X-band) semiconductor. Donors in GaAs and InP transform from their shallow, hydrogenic state to the DX configuration at hydrostatic pressures near 23 and 82 kbar, respectively. This donor configuration change has been studied using local vibrational mode (LVM) spectroscopy in the far infrared region of the electromagnetic spectrum. Recently we have investigated several LVMs's of H-containing complexes in GaAs as a function of hydrostatic pressure at liquid He temperatures. Depending on the specific complex we find the LVM frequencies to vary either linearly, sub- or superlinearly with hydrostatic pressure. In the case of O in Si the vibrational mode changes its character from that of a harmonic oscillator to a rotor as pressure is applied. The implications of the pressure dependences of LVMs's are discussed.
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Acknowledgements
This work was supported in part by the Director, Office of Energy Research, Office of Basic Energy Sciences, Materials Sciences Division of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098 and in part by USNSF grant DMR-94 17763.
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Haller, E.E., McCluskey, M.D. Infrared Optical Studies of Semiconductors at Large Hydrostatic Pressures. MRS Online Proceedings Library 499, 371–380 (1997). https://doi.org/10.1557/PROC-499-371
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DOI: https://doi.org/10.1557/PROC-499-371