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Low Temperature Chemical Vapor Deposition of Titanium Dioxide Thin Films Using Tetranitratotitanium (IV)

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Abstract

Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184°C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230–500°C with a precursor vessel temperature at 22°C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19–30 and leakage current densities as low as 10−8 Amp/cm2.

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Acknowledgments

This research was supported by a grant from the Semiconductor Research Corporation.

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Authors and Affiliations

  1. Department of Chemistry, University of Minnesota, Minneapolis, MN, 55455, USA

    D. C. Gilmer, W. L. Gladfelter, D. G. Colombo, C. J. Taylor, J. Roberts, S. A. Campbell & G. D. Wilk

  2. Department of Electrical Engineering, University of Minnesota, Minneapolis, MN, 55455, USA

    H. -S. Kim

  3. Texas Instruments, 13588 N. Central Expressway, Dallas, TX, 75243, USA

    M. A. Gribelyuk

Authors
  1. D. C. Gilmer
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  2. W. L. Gladfelter
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  3. D. G. Colombo
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  4. C. J. Taylor
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  5. J. Roberts
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  6. S. A. Campbell
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  7. H. -S. Kim
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  9. M. A. Gribelyuk
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Gilmer, D.C., Gladfelter, W.L., Colombo, D.G. et al. Low Temperature Chemical Vapor Deposition of Titanium Dioxide Thin Films Using Tetranitratotitanium (IV). MRS Online Proceedings Library 495, 45–50 (1997). https://doi.org/10.1557/PROC-495-45

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