Abstract
This contribution reports the in situ growth of transparent, conducting GaxIn2−xO3 and ZnkIn2Ok+3 films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2 (dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 - 1.0 range is predominantly cubic with 25° C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2 × 1020 cm−3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range K = 0.16 − 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25° C) as high as 1000 S/cm (n-type; carrier density = 3.7 × 1020 cm−3, mobility = 18.6 cm2/Vs) for K = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.
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Acknowledgments
We thank the NSF-MRSEC Program (Grant DMR-9632472) through the Northwestern University Materials Research Center and ONR/NSF ARPA (N00014-95-1-0717/CHE-9421910) for support of this research. We thank our colleagues T 0. Mason, K. R. Poepplemeier, and their students for stimulating discussions and interchange of information.
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Wang, A., Cheng, S.C., Belot, J.A. et al. Metal-Organic Chemical Vapor Deposition Routes to Films of Transparent Conducting Oxides. MRS Online Proceedings Library 495, 3–10 (1997). https://doi.org/10.1557/PROC-495-3
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DOI: https://doi.org/10.1557/PROC-495-3