Abstract
The surface electronic structure of wurtzite GaN (0001) (1 × 1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N2 ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H2 and O2, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of spz character, consistent with a dangling bond state.
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References
Wide Band Gap Semiconductors, MRS Symp. Proc. 242, Ed. T.D. Moustakas, J.I. Pankove, and Y. Hamakawa, (1992); S. Strite and H. Morkoç H, J. Vac. Sci. Technol. B10, 1237 (1992)
See for example: Angle Resolved Photoemission, Ed. S.D. Kevan, Elsevier, Amsterdam, 1991; K.E. Smith and S.D. Kevan, Prog. Solid State Chem. 21,49(1991).
T. Lei, M. Fanciulli, R.J. Molnar, T.D. Moustakas, R.J. Graham, and J. Scanlon, App. Phy. Lett. 59, 944 (1991).
S.D. Kevan, Rev. Sci. Instrum. 54, 1441 (1983).
V.M. Bermudez, R. Kaplan, M.A. Khan and J.N. Kuznia, Phys. Rev. B48, 2436 (1993).
V.M. Bermudez, Appl. Surf. Sci. (in press).
See for example T.-C. Chiang, J.A. Knapp, M. Aono, and D.E. Eastman, Phys. Rev. B21, 3513 (1980), and Ref. 2.
S.S. Dhesi, C.B. Stagarescu, K.E. Smith, D. Doppalapudi, R. Singh and T.D. Moustakas, Phys. Rev. B56, 10271 (1997).
A. Rubio, J.L. Corkill, M.L. Cohen, E.L. Shirley, and S.G. Louie, Phys. Rev. B 48, 11810 (1993).
Acknowledgments
This work was supported in part by the National Science Foundation under DMR-9504948. Photoemission experiments were undertaken at the National Synchrotron Light Source, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Divisions of Materials and Chemical Sciences. TDM acknowledges the support of DoD/ARPA under grant MDA972-96-3-0014. We are grateful to V.M. Bermudez for numerous helpful discussions.
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Smith, K.E., Dhesi, S.S., Stagarescu, C.Β. et al. Photoemission Study of the Electronic Structure of Wurtzite GaN(0001) Surfaces. MRS Online Proceedings Library 482, 802–807 (1997). https://doi.org/10.1557/PROC-482-787
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DOI: https://doi.org/10.1557/PROC-482-787