Skip to main content
SpringerLink
Log in

Compositionally Dependent Band Offsets in Aln/AlxGa1-xN Heterojunctions Measured by Using X-Ray Photoelectron Spectroscopy

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Although GaN has been extensively studied for applications in both light emitting and high power devices, the AlN/GaN valence band offset remains an area of contention. Values quoted in the literature range from 0.8eV (Martin)[1] to 1.36eV (Waldrop)[2]. This paper details an investigation of the AIN/AlxGa1-xN band offset as a function of alloy composition. We find an AlN/AlxGa1-xN valence band offset that is nearly linear with Al content and an end point offset for AlN/GaN of 1.36 ± 0.1 eV. Samples were grown using radio frequency plasma assisted molecular beam epitaxy and characterized with x-ray photoelectron spectroscopy(XPS). Core-level and valence-band XPS data for AIN (0001) and AlxGa1-xN (0001) samples were analyzed to determine core-level to valence band maximum (VBM) energy differences. In addition, oxygen contamination effects were tracked in an effort to improve accuracy. Energy separations of core levels were obtained from AlN/AlxGa1-xN(0001) heterojunctions. From this and the core-level to valence band maximum separations of the bulk materials, valence band offsets were calculated.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G. Martin, S. Strite, A. Agarwal, A. Rockett, H. Markoc, W.R.L. Lambrecht, and B Segall, Appl. Phys. Lett. 65, 610 (1994).

    Article  CAS  Google Scholar 

  2. J.R. Waldrop, R.W. Grant Appl. Phys. Lett. 68, 2879 (1996).

    Article  CAS  Google Scholar 

  3. S. Bloom, G. Harbeke, E Meier, and I. B. Ortenburger, Phys. Status Solidi B66, 161 (1974).

    Article  Google Scholar 

  4. W.R.L. Lambrecht and B. Segall, Phys. Rev. B 50, 14155 (1994).

    Article  CAS  Google Scholar 

  5. Y.N. Xu and W.Y. Ching, Phys. Rev. B48, 4335 (1993).

    Article  Google Scholar 

  6. H. Angerer {etet al.}, Appl. Phys. Lett. 71, 1504 (1997).

    Article  CAS  Google Scholar 

  7. S. Strite and H. Markoc, J. Vac. Sci. Technol. 10, 1237 (1992).

    Article  CAS  Google Scholar 

Download references

Acknowledgments

This work was supported by DARPA and monitored by the ONR under Grant N00014-92-J-1845.

Author information

Authors and Affiliations

  1. Laboratories of Applied Physics, California Institute of Technology, Pasadena, CA, 91125, USA

    E.C. Piquette, R.W. Grant, T.C. McGill & T.J. Watson

Authors
  1. E.C. Piquette
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R.W. Grant
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T.C. McGill
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. T.J. Watson
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to E.C. Piquette.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Piquette, E., Grant, R., McGill, T. et al. Compositionally Dependent Band Offsets in Aln/AlxGa1-xN Heterojunctions Measured by Using X-Ray Photoelectron Spectroscopy. MRS Online Proceedings Library 482, 790–795 (1997). https://doi.org/10.1557/PROC-482-775

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-482-775

Search

Navigation