Skip to main content
SpringerLink
Log in

Nondestructive, Room Temperature Determination of the Nature of the Band-Bending (Carrier Type) in Group III Nitrides Using Contactless Electroreflectance and Surface Photovoltage Spectroscopy

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Using contactless electroreflectance and surface photovoltage spectroscopy at room temperature we have nondestructively evaluated the band bending (carrier type) at the surface of epitaxial n- and p-type GaN/sapphire samples as well as at both the InGaN surface and the GaN at the InGaN/GaN interface of samples of epitaxial InGaN grown on top of thick GaN epilayers/sapphire, having average n- and p-type character.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. Nakamura and G. Fasol, The Blue Laser Diode: GaN based Light Emitters and Lasers, Springer-Verlag, Berlin, 1997.

    Book  Google Scholar 

  2. See, for example, GaN and Related Materials, ed. by S. J. Pearton, Gordon & Breach Sci. Pub., Australia, 1997.

  3. H. Amano et al, Inst. Phys. Conf. Ser. 106, 725 (1989); also, Jpn. J. Appl. Phys. 28, L2112 (1989).

    Google Scholar 

  4. S. Nakamura et al, Jpn. J. Appl. Phys. 30, L1708 (1991).

    Article  Google Scholar 

  5. F.H. Pollak and H. Shen, Mat. Sci. and Eng. R10, 275 (1993).

    CAS  Google Scholar 

  6. O.J. Glembocki and B.V. Shanabrook, Semiconductors and Semimetals, Vol.36, ed. D.G. Seiler and C.L. Littler (Academic, New York, 1992) p. 222

    Google Scholar 

  7. S.M. Thurgate et al Surface Science 310, 103 (1994).

    Article  CAS  Google Scholar 

  8. L. Kronik et al, J. Electron. Mat. 24, 379 (1995).

    Article  CAS  Google Scholar 

  9. L. Kronik et al, Appl. Phys. Lett. 67, 1405 (1995).

    Article  CAS  Google Scholar 

  10. L. Aigouy et al, Solid State Comm. 102, 877 (1997).

    Article  CAS  Google Scholar 

  11. L. Aigouy et al, Proc. 4th Int. Symp. Quantum Confinement Nanoscale Materials, Devices, and Systems. ed. by M. Cahay, J.P. Leburton, D.J. Lockwood, and S. Bandyopadhyay, Electrochemical Society Proc. vol.97–11 (Electrochemical Society, Pennington, 1997) p. 146.

  12. F.H. Pollak et al, IEEE Journal of Selected Topics in Quantum Electronics: Applied Optical Diagnostics of Semiconductors, 1, 1002 (1995).

    Article  CAS  Google Scholar 

  13. N. Ashkenasy {etet al} to be published in J. Appl. Phys.

  14. X. Yin et al, Appl. Phys. Lett. 60, 1336 (1992).

    Article  CAS  Google Scholar 

  15. A.C. Warren et al, J. Vac. Sci. Technol. B 10, 1904 (1992).

    Article  CAS  Google Scholar 

  16. S.E. Acosta-Ortiz and A. Lastraz-Martinez, Phys. Rev. B 40, 1426 (1989); T. Holden et al, Appl. Phys. Lett. 70, 1107 (1997).

    Article  CAS  Google Scholar 

  17. M.H. Herman, Proc. of the Society of Photo-optic Instrumentation Engineers, ed. F.H. Pollak, M. Cardona and D.E. Aspnes (SPIE, Bellingham, 1990), Vol. 1286, p. 39

  18. X.C. Zhang et al, Appl. Phys. Lett. 56, 2228 (1990).

    Article  CAS  Google Scholar 

  19. C. Yuan et al, J. Vac. Sci. Technol. B 13, 2075 (1995).

    Article  CAS  Google Scholar 

  20. M. Schurman et al, Mat. Sci. & Eng. B 43, 222 (1997).

    Article  Google Scholar 

  21. C.F. Li et al, Phys. Rev. B 55, 9251 (1997).

    Article  CAS  Google Scholar 

  22. W. Shan et al, Appl. Phys. Lett. 66, 985 (1995).

    Article  CAS  Google Scholar 

  23. W. Shan et al, Appl. Phys. Lett. 69, 3315 (1996).

    Article  CAS  Google Scholar 

  24. S. Logothetidis et al, Phys. Rev. B 50, 18017 (1994).

    Article  CAS  Google Scholar 

Download references

Acknowledgments

The authors WK and FHP acknowledge the support of NSF grant #DMR-9414209, PSC/BHE grant #666424 and the NY State Science and Technology Foundation through its Centers for Advanced Technology program.

Author information

Authors and Affiliations

  1. Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, NY, 11210, USA

    Wojciech Krystek & Fred H. Pollak

  2. EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ, 08873, USA

    Z.C. Feng, M. Schurman & R.A. Stall

Authors
  1. Wojciech Krystek
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Fred H. Pollak
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Z.C. Feng
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. Schurman
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. R.A. Stall
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Wojciech Krystek.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Krystek, W., Pollak, F.H., Feng, Z. et al. Nondestructive, Room Temperature Determination of the Nature of the Band-Bending (Carrier Type) in Group III Nitrides Using Contactless Electroreflectance and Surface Photovoltage Spectroscopy. MRS Online Proceedings Library 482, 611–616 (1997). https://doi.org/10.1557/PROC-482-573

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-482-573

Search

Navigation