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Defect Reduction and Improved Device Performance using Rapid Isothermal Diffusion in Silicon

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Abstract

Quantum photoeffects associated with photons of wavelength less than 0.8 micron lead to higher bulk and surface diffusion coefficients. We have exploited this fundamental property in designing rapid isothermal processing (RIP) systems for shallow junction formation in silicon. A detailed comparative study of diffusion, metallization and CVD with and without high energy photons has been carried out. The results show that microscopic defects, cycle time and processing temperature is lower than what can be achieved byconventional methods is realized by using photons in the ultra violet (UV) and vacuum ultra violet (VUV) spectrum.

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Acknowledgement

A part of this work is supported by Advanced Technology Program (NIST/DOC) under contract number 70NANB5H 1071.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Clemson University, Clemson, SC, 29634, USA

    L. Vedula & D. Ratakonda

  2. Department of Electrical Computer Engineering and Director, Materials Science and Engineering, Clemson University, Clemson, SC, 29634, USA

    R. Singh

  3. Georgia Institute of Technology, School of Electrical Engineering, Atlanta, GA, 30332, USA

    A. Rohatgi

  4. Solarex, Frederick, MD, 21701, USA

    S. Narayanan

Authors
  1. L. Vedula
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  2. R. Singh
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  3. D. Ratakonda
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  4. A. Rohatgi
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  5. S. Narayanan
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Vedula, L., Singh, R., Ratakonda, D. et al. Defect Reduction and Improved Device Performance using Rapid Isothermal Diffusion in Silicon. MRS Online Proceedings Library 469, 437–442 (1997). https://doi.org/10.1557/PROC-469-437

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  • DOI: https://doi.org/10.1557/PROC-469-437

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