Abstract
Auger electron spectroscopy was used to examine the nitridation behavior of GaAs, sapphire and lithium aluminate (LAO) substrates exposed to an RF nitrogen plasma. No evidence of nitridation was found for the sapphire and LAO substrates. GaAs substrates did show evidence of nitridation which led to smooth InN surface morphology without the need for a low temperature buffer. Comparable InN films were obtained on sapphire and LAO substrates when a low temperature AlN buffer was used. Hall measurements indicate background carrier concentrations are relatively insensitive to substrate type, though mobilities decreased as surface morphology was improved.
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Acknowledgement
This work was supported by NSF Grant #ECS-952287 and ARO AASERT DAAHO4- 95-1-0196.
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Donovan, S.M., MacKenzie, J.D., Abernathy, C.R. et al. Substrate Effects on the Growth of InN. MRS Online Proceedings Library 468, 161–166 (1997). https://doi.org/10.1557/PROC-468-161
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DOI: https://doi.org/10.1557/PROC-468-161