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Large Crystallite Polysilicon Deposited Using Pulsed-Gas PECVD at Temperatures Less Than 250°C

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Abstract

A pulsed-gas intermittent deposition technique is used to deposit high crystallinity hydrogenated micro- or poly-crystalline silicon using silane and hydrogen. This method has been used to deposit crystallites that are comparable to those obtained using PECVD of fluorinated silanes. RHEED and TEM have been used to understand the nucleation process. The pulsed-gas method is promising for depositing polycrystalline silicon and subsequent use in thin film transistor applications.

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Authors and Affiliations

  1. Dept. of Chemical Engineering, N.C. State University, Raleigh, NC, 27695, USA

    E. Srinivasan, S. J. Ellis & G. N. Parsons

  2. Dept. of Physics, N.C. State University, Raleigh, NC, 27695, USA

    R. J. Nemanich

Authors
  1. E. Srinivasan
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  2. S. J. Ellis
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  3. R. J. Nemanich
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  4. G. N. Parsons
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Srinivasan, E., Ellis, S.J., Nemanich, R.J. et al. Large Crystallite Polysilicon Deposited Using Pulsed-Gas PECVD at Temperatures Less Than 250°C. MRS Online Proceedings Library 452, 989–994 (1996). https://doi.org/10.1557/PROC-452-989

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  • DOI: https://doi.org/10.1557/PROC-452-989

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