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Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit in the Si/Si1-xGex System

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Abstract

The Si/Si1-xGex quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. We report theoretical calculations for Z in this system, based on which Si/Si1-xGex quantum-well structures were grown by molecular-beam epitaxy. Thermoelectric and other transport measurements were made, indicating that an increase in Z over bulk values is possible through quantum confinement effects in the Si/Si1-xGex quantum-well structures.

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Authors and Affiliations

  1. Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    X. Sun & M. S. Dresselhaus

  2. Department of Electrical Engineering, University of California, Los Angeles, CA, 90024, USA

    K. L. Wang & M. O. Tanner

Authors
  1. X. Sun
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  2. M. S. Dresselhaus
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  3. K. L. Wang
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  4. M. O. Tanner
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Sun, X., Dresselhaus, M.S., Wang, K.L. et al. Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit in the Si/Si1-xGex System. MRS Online Proceedings Library 452, 261–266 (1996). https://doi.org/10.1557/PROC-452-261

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  • DOI: https://doi.org/10.1557/PROC-452-261

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