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Correlation of Rutherford Backscattering and Electrical Measurements on Si Implanted InP Following Rapid Thermal and Furnace Annealing

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Abstract

We report on the structural and electrical properties of (100) InP resulting from the implantation of 180 keV Si+ and subsequent annealing. The radiation damage produced by implantation at substrate temperatures from 77 to 480 K is evaluated using MeV He ion channeling. Varying degrees of recrystallization are found depending on the implant temperature and choice of furnace vs. rapid thermal annealing. Samples implanted at 25°C to a dose of 3.3·1014ions/cm2 continue to display structural disorder regardless of annealing procedures. In contrast, implantation at 200°C to 3.3·1014ions/cm2 produces a low but measurable damage level. Further annealing lowered the disorder to a level similar to that of unimplanted material.

The electrical activation of both low and high fluence ion doses is nearly the same at the optimal conditions for rapid thermal annealing (RTA) or furnace annealing (FA). However the electron mobility is found to be higher after hot implantation and RTA. The electrical profile after hot implantation is wider than the profile after RT implants and FA.

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Authors and Affiliations

  1. Dept. of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA

    G. Bahir & J. L. Merz

  2. Stanford Electronics Laboratories, Stanford, CA, 94305, USA

    J. R. Abelson & T. W. Sigmon

Authors
  1. G. Bahir
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  2. J. L. Merz
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  3. J. R. Abelson
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  4. T. W. Sigmon
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Bahir, G., Merz, J.L., Abelson, J.R. et al. Correlation of Rutherford Backscattering and Electrical Measurements on Si Implanted InP Following Rapid Thermal and Furnace Annealing. MRS Online Proceedings Library 45, 297–302 (1985). https://doi.org/10.1557/PROC-45-297

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