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High-Frequency Field Effects on Ionic Defect Concentrations and Solid-State Diffusion Processes

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Abstract

We describe computer simulations of a microwave-induced driving force for ionic transport. The simulations are based on a model which predicts rectification of ionic fluxes at interfaces and a resulting depletion or accumulation of defects near the interface. Some details of the model are discussed, results of the simulations are presented, and the impact of these effects on sintering and diffusion is discussed.

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Acknowledgments

We would like to acknowledge support from the NASA Graduate Student Researcher Program, the National Science Foundation, and the Electric Power Research Institute.

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Authors and Affiliations

  1. Materials Science Program, Univ. of Wisconsin, Madision, WI, 53706, USA

    S.A. Freeman

  2. ECE Department, Univ. of Wisconsin, Madision, WI, 53706, USA

    J.H. Booske

  3. MS&E Department, Univ. of Wisconsin, Madision, WI, 53706, USA

    R.F. Cooper

Authors
  1. S.A. Freeman
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  2. J.H. Booske
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  3. R.F. Cooper
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Correspondence to S.A. Freeman.

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Freeman, S., Booske, J. & Cooper, R. High-Frequency Field Effects on Ionic Defect Concentrations and Solid-State Diffusion Processes. MRS Online Proceedings Library 430, 417–422 (1996). https://doi.org/10.1557/PROC-430-417

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  • DOI: https://doi.org/10.1557/PROC-430-417

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