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Measurements Of Stress Evolution During Thin Film Deposition

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Abstract

We have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.

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Acknowledgments

We thank Mike Sinclair, Carl Seager and R.C. Cammarata for useful discussions. This work was performed at Sandia National Laboratories and supported by the U.S. Dept. of Energy under contract DE-AC04-94AL85000.

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Authors and Affiliations

  1. Sandia National Laboratories, Albuquerque, NM, 87185-1415, USA

    E. Chason & J. A. Floro

Authors
  1. E. Chason
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  2. J. A. Floro
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Chason, E., Floro, J.A. Measurements Of Stress Evolution During Thin Film Deposition. MRS Online Proceedings Library 428, 499–504 (1996). https://doi.org/10.1557/PROC-428-499

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  • DOI: https://doi.org/10.1557/PROC-428-499

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