Abstract
By using TDEAT and ammonia gas, MOCVD TiN films were grown at 300°C and 30torr.After annealing in a vacuum furnace at 500°C, 550°C, and 600°C, the TiN films were investigated by transmission electron microscopy (TEM). After annealing at 550°C, both hexagonal and cubic A1N phase were found at the interface between Al and TiN films. A Ti rich phase such as Al3Ti was also found at Al side. The failure mechanism during high temperature annealing is discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
F. Pintchovski, T. White, E. Travis, P. J. Tobin, and J. B. Price, in Tungsten and Other Refractory Metals for VLSI Applications VI, edited by R. S. Blewer and C. M. McConica (Mater. Res. Soc., Pittsburgh, PA, 1989) p. 275.
R. M. Fix, R. G. Gordon, and D. M. Hoffman, Chem. Mater., 2, 235 (1990).
R. M. Fix, R. G. Gordon, and D. M. Hoffman, Chem. Mater., 3, 1138 (1991).
T. Itoh, T. J. Konno, R. Sinclair, I. J. Raaijmakers and B. E. Roberts, in Advanced Metallization for Devices and Circuits-Science, Technology, and Manufacturability, edited by S. P. Murarka et al. (Mater. Res. Soc. Symp. Proc., 337, Pittsburgh, PA, 1994) p.735.
R. Beyers, R. Sinclair and M. E. Thomas, J. Vac. Sci. Technol., B2, 781 (1984).
J. Appl. Phys. (1982) 53 IssueID{2}
G.L. Grigorov, K.G. Grigorov, M. Stoyanova, J.L. Vignes, J.P. Langcron, P. Denjean, and J. Perriere, Appl. Phys., A55, 502 (1992).
G.L. Grigorov, K.G. Grigorov, M. Stoyanova, J.L. Vignes, J.P. Längeren, and P. Denjean, Appl. Phys., A57, 195 (1993).
M. Okihara, N. Hirashita, K. Hashimoto, and H. Onoda, Appl. Phys. Lett., 66{11}, 1328 (1995).
S. Sobuc, S. Mukainakano, Y. Ueno, and T. Hattori, Jpn. J. Appl. Phys., 34, 987 (1995).
L. Hultman, S. Benhenda, G. Radnoczi, J.E. Sundgren, J.E. Greene, and I. Petrov, Thin Solid Films, 215, 152 (1992).
A. Raman and K. Schubert, Z. Metallkdc, 56, 99 (1965).
R. W. Bower, Appl. Phys. Lett., 23, 99 (1973).
B. W. Shen, J. M. Anthony, P. H. Chang, J. Keenan, R. Matyi and H. L. Tsai, in Thin Films-Interfaces and Phenomena, edited by R. J. Nemanich, P. S. Ho, and S. S. Lau (Mater. Res. Soc., Pittsburgh, PA, 1986) p. 103.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Lee, H., Sinclair, R., Li, P. et al. The Failure Mechanism of MOCVD TiN Diffusion Barrier at high Temperature. MRS Online Proceedings Library 428, 279–284 (1996). https://doi.org/10.1557/PROC-428-279
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-428-279