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High Quality P-Type GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy

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p-type GaN films were grown on a (0001) sapphire substrate by the plasma-assisted molecular beam epitaxy. A low-contamination, high-power efficiency inductively coupled radio frequency plasma source was used, which was developed at the University of Illinois. Using an MBE system equipped with this plasma source, high-quality p-type GaN films were grown without post-growth treatment. X-ray rocking curve measurements for (0002) diffraction showed a full width at half maximum of less than 7 arcmin. The highest room-temperature hole concentration obtained was 1.4×l020 cm−3, and for the same sample, the mobility was 2.5 cm2/V·s. It is believed that the Mott-Anderson transition occurred in this sample resulting in a metallic-type conductivity in the impurity subband. Low-temperature photoluminescence had a blue emission band and no deep-level transitions, indicating the high quality of the grown films. Uniformity of the Mg doping was confirmed by secondary ion mass spectrometry.

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References

  • S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).

    Article  CAS  Google Scholar 

  • H. Morkoç, S. Strite, G.B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).

    Article  Google Scholar 

  • M. E. Lin, G. Xue, G. L. Zhou, J. E. Greene, and H. Morkoç, Appl. Phys. Lett. 63, 932 (1993).

    Article  CAS  Google Scholar 

  • S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys. 31, L139 (1992).

    Article  CAS  Google Scholar 

  • S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 31, 1258 (1992).

    Article  CAS  Google Scholar 

  • H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1989).

    Article  CAS  Google Scholar 

  • T. D. Moustakas and R. J. Molnar, Mat. Res. Soc. Symp. Proc. 281, 753 (1993).

    Article  CAS  Google Scholar 

  • R. J. Molnar, R. Singh, and T. D. Moustakas, Appl. Phys. Lett. 66, 268 (1995).

    Article  CAS  Google Scholar 

  • Z. Yang, L. K. Li, and W. I. Wang, Appl. Phys. Lett. 67, 1686 (1995).

    Article  CAS  Google Scholar 

  • S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996).

    Article  CAS  Google Scholar 

  • O. Gluschenkov et al., manuscript in preparation.

  • N. F. Mott, Proc. Phys. Soc. A62, 416 (1949); Metal-Insulator Transition (Taylor & Francis, London, 1990), pp. 145–169.

    Article  Google Scholar 

  • P. W. Anderson, Phys. Rev. 109, 1492 (1958).

    Article  CAS  Google Scholar 

  • B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors, Springer Series in Solid-State Sciences 45, (1984).

  • J. I. Pankove, Optical Processes in Semiconductors (Prentice-Hall, New Jersey, 1971), pp. 132–139.

    Google Scholar 

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Acknowledgments

This work was supported by Samsung Electronics Co. Ltd.. The authors would like to thank Dr. S. Kim and Prof. S.G. Bishop for the photoluminescence measurements and valuable discussions.

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Authors and Affiliations

  1. Departments of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1406 W. Green St., Urbana, IL, 61801, USA

    J.M. Myoung & K.H. Shim

  2. Departments of Materials Science and Physics, University of Illinois at Urbana-Champaign, 1406 W. Green St., Urbana, IL, 61801, USA

    C. Kim

  3. Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 1406 W. Green St., Urbana, IL, 61801, USA

    O. Gluschenkov & K. Kim

  4. Samsung Advanced Institute of Technology, USA

    M.C. Yoo

Authors
  1. J.M. Myoung
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  2. C. Kim
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  3. K.H. Shim
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  4. O. Gluschenkov
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  5. K. Kim
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  6. M.C. Yoo
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Myoung, J., Kim, C., Shim, K. et al. High Quality P-Type GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy. MRS Online Proceedings Library 423, 385–390 (1996). https://doi.org/10.1557/PROC-423-385

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