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Rutherford Backscattering and Photoluminescence Studies of Erbium Implanted GaAs

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The results of parallel RBS and photoluminescence studies of erbium implanted GaAs are presented. Low dose implantations do not produce any significant PL signals, and the dose must be in the range le14 to le15 /cm2 in order that Er related emission dominates in the PL spectrum. A comprehensive analysis of the effects of coimplantation with oxygen on the Er luminescence is reported and the data are compared to those of GaAs:Er and AlGaAs:Er samples grown by MBE. The evidence indicates that, at high doses, ErAs precipitates are formed unless oxygen is co-implanted, and that the Er atoms which produce the luminescence occupy substitutional Ga sites.

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References

  1. H. Ennen, J. Wagner, H.D. Muller and R.S. Smith. J. Appl. Phys. 61 (1994) 4171.

    Google Scholar 

  2. D. Seghier, T. Benyattou, A. Kalboussi, S. Moneger, G. Marrakchi, S. Guillot, B. Lambert and A. Guivarch. J. Appl. Phys. 75 (1987) 4877.

    Google Scholar 

  3. K. Takahei, Peter S. Whitney, Horoshi Nakagonne, Kunihiko Uwai. J. Appl. Phys. 65 (1989) 1257.

    Article  CAS  Google Scholar 

  4. Joyoji Nakata, Moriyuki Taniguchi, K. Takahei. Appl. Phys. Lett. 61(1992) 2665.

    Article  CAS  Google Scholar 

  5. Gernot S. Pomrenke, H. Ennen and W. Haydl. J. Appl. Phys. 59(1986) 601.

    Article  CAS  Google Scholar 

  6. P. N. Favennec, H. L. Haridon, D. Moutonnet, M. Salvi, M. Gauneau and A. C. Papadopoulo. Inst Physi. Conf. Ser. 106 (1989) 333.

    Google Scholar 

  7. A. Kozanecki, M. Chang, C. Jeynes, B. Sealy and K. Homewood. Solid State Commun. 78 (1991) 763.

    Article  CAS  Google Scholar 

  8. E. Alves, M. F. daSilva, A. A. Melo, J. C. Soares, G. N. van den Hoven, A. Polman K. R. Evans and C. R. Jones. Mat. Res. Soc. Symp. Proc. 301 (1993) 175.

    Article  CAS  Google Scholar 

  9. I. Poole, K. E. Singer and A. R. Peaker. J. Cryst. Growth 121 (1992) 121.

    Article  CAS  Google Scholar 

  10. K. Takahei, A. Taguchi, Y. Horikoshi and J. Nakata. J. Appl. Phys. 76 (1994) 4332.

    Article  CAS  Google Scholar 

  11. D. W. Elsaesser, Y, K. Yeo, R. L. Hengehold, K. R. Evans and F. L. Pedrotti. J. Appl. Phys. 77(1995)3919.

    Article  CAS  Google Scholar 

  12. J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y.-H. Xie, J. M. Poate, and L. C. Kimmerling, J. Appl. Phys. 70 (1991) 2672.

    Article  CAS  Google Scholar 

  13. P. J. M. Smulders and D. O. Boerma. Nucl. Instr. and Meth. B29 (1987) 471.

    Article  Google Scholar 

Download references

Acknowledgments

This research has been supported by the EU under contract ERBCHRXCT930363 and by the Irish Science and Technology Agency (Forbairt) under grant SC/93/189 and under the Optronics Ireland Program in Advanced Technology.

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Author notes

  1. S. E. Daly

    Present address: Physics Department, Dublin Institute of Technology, Kevin St., Dublin 8, Ireland

Authors and Affiliations

  1. School of Physical Sciences, Dublin City University, Dublin 9, Ireland

    M. O. Henry

  2. Departamento de Fisica, Instituto Tecnológico e Nuclear, Estrada Nacional 10, Sacavém, Portugal

    E. Alves

  3. Centro de Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto, 2, 1699, Lisboa, Portugal

    J. C. Soares

  4. Department of Electrical and Electronic Engineering, University of Surrey, Guildford, GU2 5XH, UK

    R. Gwilliam & B. J. Sealy

  5. Institut für Strahlen und Kernphysik der Universität Bonn, D-53115, Bonn, Germany

    K. Freitag & R. Vianden

  6. Institut Supérieur d'Electronique du Nord, 41 Boulevard Vauban, 59046, Lille, France

    D. Stievenard

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  1. S. E. Daly
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  2. M. O. Henry
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  4. J. C. Soares
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  6. B. J. Sealy
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Correspondence to S. E. Daly.

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Daly, S.E., Henry, M.O., Alves, E. et al. Rutherford Backscattering and Photoluminescence Studies of Erbium Implanted GaAs. MRS Online Proceedings Library 422, 173–178 (1996). https://doi.org/10.1557/PROC-422-173

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  • DOI: https://doi.org/10.1557/PROC-422-173

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