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Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes

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Abstract

Long-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 µm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.

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Acknowledgments

Vijay Jayaraman would like to acknowledge support from BMDO contract DASG-60-C-0022.

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Author notes

  1. D.I. Babic

    Present address: Hewlett Packard Laboratories, Palo Alto, CA, USA

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA

    D.I. Babic, V. Jayaraman, N. M. Margalit, K. Streubel,  M.E.Heimbuch, R.P. Mirin, B.J. Thibeault, J.E. Bowers, E.L. Hu & S. Denbaars

  2. Optical Concepts, Lompoc, CA, 93436, USA

    V. Jayaraman

  3. Royal Institute of Technology, Stockholm, Sweden

    K. Streubel

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  1. D.I. Babic
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  2. V. Jayaraman
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  3. N. M. Margalit
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  4. K. Streubel
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  5. M.E.Heimbuch
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  6. R.P. Mirin
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  7. B.J. Thibeault
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  8. J.E. Bowers
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  9. E.L. Hu
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  10. S. Denbaars
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Babic, D., Jayaraman, V., Margalit, N.M. et al. Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes. MRS Online Proceedings Library 421, 63–74 (1996). https://doi.org/10.1557/PROC-421-63

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  • DOI: https://doi.org/10.1557/PROC-421-63

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