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The Influence of Interface Traps on the High Frequency and High Temperature Performance of SiC Field Effect Transistors

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Abstract

Fast and slow interface traps can considerably deteriorate the performance of field effect transistors. Slow interface traps, by slowly changing their charge occupancy, contribute to a drift in the quiescent operation point of the transistor, while fast traps deteriorate the device performance by contributing to both amplitude and phase current noise. They also result in a non-equilibrium surface depletion layer between gate and source which increases the gate-to-source parasitic resistance and deteriorates the device transconductance. We examine these different effects and present some preliminary data regarding interface traps in boron-doped 6H-SiC.

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References

  1. R. J. Trew et al., Proceedings of the IEEE, 79(5), pp. 598–620 (1991)

  2. P. Neudeck, S. Kang, J. Petit, and M. Tabib-Azar, J. Appl. Phys. 75 (11), (1994)

    Google Scholar 

  3. M. Dryfuse, and M. Tabib-Azar, To appear in Solid-State Electronics.

  4. M. Tabib-Azar, Solid-State Electronics, 38(7), 1395 (1995)

    Article  CAS  Google Scholar 

  5. J. Sheony, et al, 21st Int. Symp. Compound Semi., San Diego, Sept. 18–22 (1994)

    Google Scholar 

  6. S. Kang, P. Neudeck, J. Petit, and M. Tabib-Azar, Inst, of Physics Series # 137, pp. 633–636 (1993)

    Google Scholar 

  7. J. H. Zhao et al., Solid-State Electronics, Vol. 36 (12), pp. 1665–1672 (1993)

    Article  CAS  Google Scholar 

  8. R. F. Pierret, Modular Series on Solid State Devices; Field Effect Devices. Editors: R. F. Pierret, G. W. Neudeck, Addison-Wesley Publishing Company, Reading MA (1983)

  9. D. K. Schroder, Semiconductor Material and Device Characterization. Wiley, New York (1990)

    Google Scholar 

  10. J. W. Orton, and P. Blood, The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties. Academic Press San Diego, CA (1990)

    Google Scholar 

  11. E. H. Nicollian and J. R. Brews, MOS. Physics and Technology. John Wiley and Sons, New York (1982)

    Google Scholar 

  12. S. Kang, Electrical Passivation of 6H-SiC By Thermal Oxidation and Its Characterization and Application in SiC MOSFETs, Case Western Reserve University, Ph. D. Thesis (1995)

    Google Scholar 

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Authors and Affiliations

  1. Electrical Eng. & Applied Physics Dept., Case Western Reserve University, Cleveland, Ohio, 44106, USA

    H. Aydin, M. W. Dryfuse & M. Tabib-Azar

Authors
  1. H. Aydin
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  2. M. W. Dryfuse
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  3. M. Tabib-Azar
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Aydin, H., Dryfuse, M.W. & Tabib-Azar, M. The Influence of Interface Traps on the High Frequency and High Temperature Performance of SiC Field Effect Transistors. MRS Online Proceedings Library 410, 73–76 (1995). https://doi.org/10.1557/PROC-410-73

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