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Growth of Polycrystalline Silicon Films at Low Temperature by Plasma Enhanced Chemical Vapor Deposition

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Abstract

Polycrystalline silicon (poly-Si) films are of great interest in the field of TFT fabrication for active matrix liquid crystal display(AM-LCD) applications. Low temperature depositions below 500 °C are necessary for using a glass substrate for the application to large area devices such as display devices. We investigated poly-Si growth at low temperature by plasma enhanced chemical vapor deposition (PECVD). Cathode deposition is used in which substrates are mounted on the powered electrode and a mesh electrode is attached on the cathode for protecting the growing surface from ion impacts. It is found that poly-Si films can be deposited in the wide range of SiH4 concentration even at 100%, and a high deposition rate of 35nm/min has been realized. This investigation gives highly promising results for poly-Si growth technology at low temperature.

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Authors and Affiliations

  1. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432, Japan

    Y. Hatanaka, A. H. Jayatissa, K. Ishikawa & Y. Nakanishi

Authors
  1. Y. Hatanaka
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  2. A. H. Jayatissa
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  3. K. Ishikawa
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  4. Y. Nakanishi
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Hatanaka, Y., Jayatissa, A.H., Ishikawa, K. et al. Growth of Polycrystalline Silicon Films at Low Temperature by Plasma Enhanced Chemical Vapor Deposition. MRS Online Proceedings Library 403, 345–350 (1995). https://doi.org/10.1557/PROC-403-345

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  • DOI: https://doi.org/10.1557/PROC-403-345

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