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Evolution of the Optical Response from a Very Narrow Gap Semiconductor to a Metallic Material in (FexMn,1-x)Si

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Abstract

A study of the electrical resisitivity of (FexMn1-x)Si with 0 ≤ x ≤ 1 indicates a crossover from an almost semiconducting state in FeSi to a metallic one in MnSi. Optical measurements show that the electronic structure and the vibrational behaviour appears to be essentially uneffected by the Fe/Mn substitution. Instead, a change of the free carrier density occurs, yielding a temperature and stoichiometry dependent plasma frequency.

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Acknowledgments

Parts of the work have been supported by the HCM contract Nr.CHRX-CT930318 of the European Commission and by the Austrian Science Foundation FWF, project 10269.

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Authors and Affiliations

  1. INFM - Dipartimento di Fisica“A. Volta”, Università di Pavia, Via Bassi 6, 1-27100, Pavia, Italy

    S. Bocelli, F. Marabelli & R. Spolenak

  2. Institut für Experimentalphysysik, Technical University Vienna, A-1040, Wien, Austria

    R. Spolenak & E. Bauer

Authors
  1. S. Bocelli
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  2. F. Marabelli
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  3. R. Spolenak
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  4. E. Bauer
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Bocelli, S., Marabelli, F., Spolenak, R. et al. Evolution of the Optical Response from a Very Narrow Gap Semiconductor to a Metallic Material in (FexMn,1-x)Si. MRS Online Proceedings Library 402, 361–366 (1995). https://doi.org/10.1557/PROC-402-361

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  • DOI: https://doi.org/10.1557/PROC-402-361

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