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Mechanism of Electromigration Failure in Al Thin Film Interconnects Containing Sc

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Abstract

In order to understand the role of Sc on electromigration (EM) failure, Al interconnects with 0.1 and 0.3 wt.% Sc were tested as a function of post-pattern annealing time. In response to the evolution of the line structure, the statistics of lifetime evolved. While the addition of Sc greatly reduces the rate of evolution of the failure statistics because the grain growth rate decreases, the MTF variation was found to be very similar to that of pure Al. These observations seem to show that Sc has little influence on the kinetics of Al EM; however, it has some influence on the EM resistance of the line since it is an efficient grain refiner. Unlike Cu in Al, Sc does not seem to migrate, which may explain its lack of influence on the kinetics of Al EM.

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Authors and Affiliations

  1. Center for Advanced Materials, Lawrence Berkeley Laboratory and Department of Materials Science, University of California, Berkeley, USA

    Choong-Un Kim, S. H. Kang & J. W. Morris Jr.

  2. Chemistry and Materials Science, Lawrence Livermore National Laboratory Livermore, CA, USA

    F. Y. Génin

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  1. Choong-Un Kim
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  2. S. H. Kang
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  3. F. Y. Génin
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  4. J. W. Morris Jr.
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Kim, CU., Kang, S.H., Génin, F.Y. et al. Mechanism of Electromigration Failure in Al Thin Film Interconnects Containing Sc. MRS Online Proceedings Library 391, 289 (1995). https://doi.org/10.1557/PROC-391-289

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  • DOI: https://doi.org/10.1557/PROC-391-289

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