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Study of Diffusion Barrier Performance in MOCVD TiN by Transmission Electron Microscopy

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Abstract

The diffusion barrier performances of MOCVD TiN films with different thicknesses and various contact layers are compared by bothex situ andin situ TEM experiments. MOCVD TiN films grown at 425°C and 10 torr without a titanium underlayer show a semi-columnar structure while films grown with a titanium layer are columnar. It is found that the former has better diffusion barrier performance for Al metallization in Si contact holes. In addition, it is found the MOCVD TiN films combined with a TiSi2 contact layer are stable up to 600°C.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Stanford University, CA, 94305, Stanford, USA

    Hoojeong Lee & Robert Sinclair

  2. Novellus Systems Inc, CA, 81 Vista Montana, 95134, San Jose, USA

    Bruce Roberts & Robert Jackson

Authors
  1. Hoojeong Lee
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  2. Robert Sinclair
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  3. Bruce Roberts
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  4. Robert Jackson
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Lee, H., Sinclair, R., Roberts, B. et al. Study of Diffusion Barrier Performance in MOCVD TiN by Transmission Electron Microscopy. MRS Online Proceedings Library 391, 205 (1995). https://doi.org/10.1557/PROC-391-205

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  • DOI: https://doi.org/10.1557/PROC-391-205

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