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Growth and Properties of Carbon Nitride Thin Films

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Abstract

In this paper, we report laser-assisted chemical beam epitaxy (CBE) of GaAs using triethylgallium (TEGa), tris-dimethylaminoarsenic (TDMAAs), and an ar ion laser operating at visible or ultraviolet (UV) wavelength. the laser-assisted growth with TDMAAs, compared to as4 or asH3, shows a wider range of growth enhancement at low substrate temperatures. Unlike CBE of GaAs without laser irradiation, laser-enhanced GaAs growth rate was found to be constant as the V/III incorporation ratio changes. by using diiodomethane (CI2H2) as a dopant gas, the GaAs films with laser irradiation show a much higher hole concentration than those grown simultaneously without laser irradiation at substrate temperatures from 460-530°C. Laser irradiation was also found to enhance silicon incorporation at low temperatures. Photothermal effects are responsible for laser-enhanced growth and silicon doping, but the wider temperature window in laser-enhanced growth and the laser-enhanced carbon incorporation are caused by additional photocatalytic or photochemical effects.

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Authors and Affiliations

  1. Division of applied Sciences, Department of Chemistry Harvard University, 02138, Cambridge, MA, USA

    Z. John Zhang, Peidong Yang & Charles M. Lieber

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  1. Z. John Zhang
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  2. Peidong Yang
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  3. Charles M. Lieber
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John Zhang, Z., Yang, P. & Lieber, C.M. Growth and Properties of Carbon Nitride Thin Films. MRS Online Proceedings Library 388, 271–280 (1995). https://doi.org/10.1557/PROC-388-271

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