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Scanning Tunneling Microscopy Studies of GaAs1-xPx Single Crystals

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Abstract

We report cross-sectional scanning tunneling microscopy studies of GaAsP single crystals grown by the Liquid Encapsulated Czochralski technique. We show that the two group-V elements can be clearly distinguished, which is attributed to the difference in energies of surface dangling bond states of As and P. Our atomic scale imaging results show alloy composition in agreement with spectroscopic studies. They also provide valuable information about atomic scale alloy fluctuations and clustering effects.

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Authors and Affiliations

  1. Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA, 94720, USA

    X. Liu & E. R. Weber

  2. Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA, 94720, USA

    D. F. Ogletree & M. Salmeron

  3. Institute of Experimental Physics, Warsaw University, Hoza 69, Warsaw, 00-681, Poland

    T. Slupinski

Authors
  1. X. Liu
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  2. E. R. Weber
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  3. D. F. Ogletree
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  4. M. Salmeron
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  5. T. Slupinski
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Liu, X., Weber, E.R., Ogletree, D.F. et al. Scanning Tunneling Microscopy Studies of GaAs1-xPx Single Crystals. MRS Online Proceedings Library 378, 83–88 (1995). https://doi.org/10.1557/PROC-378-83

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  • DOI: https://doi.org/10.1557/PROC-378-83

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