Abstract
Using thediffusion-segregation equation, modeling and simulations of gettering Au (a substi-tutional-interstitial species in Si) away from the Si bulk have been performed. Threeexternal gettering schemes have been considered: wafer frontside P indiffusion gettering, wafer backside Al deposition gettering, and a combination of the two processes. Under the same processing conditions, it has been shown that P indiffusion gettering is faster than Al gettering, but P gettering has a lower gettering capacity and is less stable than Al gettering for longer gettering times. The combined P and Al gettering process is as fast as P gettering in reaching an optimum gettered state, and possesses the capacity and stability of the Al gettering process.
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Gafiteanu, R., Gösele, U. & Tan, T.Y. Phosphorus and Aluminum Gettering of Gold in Silicon: Simulation and Optimization Considerations. MRS Online Proceedings Library 378, 297–302 (1995). https://doi.org/10.1557/PROC-378-297
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DOI: https://doi.org/10.1557/PROC-378-297