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Transient Mean-Field Reaction-Diffusion Model Applied to Hydrogen Evolution From Hydrogenated Amorphous Silicon

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Abstract

Hydrogen bulk mobility plays an important role in determining a wide range of materials and electronic properties of hydrogenated amorphous silicon (a-Si:H). The existence of two types of hydrogen traps plays an important role in controlling hydrogen mobility in, and evolution of hydrogen from a-Si:H, however, theoretical and experimental literature values for the trap energetics vary considerably. We have developed a mean-field reaction-diffusion model which explicitly includes two trap states and realistic surface processes to model hydrogen evolution from a-Si:H. Modern numerical techniques were required to solve this challenging problem over the wide range of temperatures and concentrations encountered in typical hydrogen evolution experiments. The model is based on a number of experimentally established parameters. Comparison of our rigorous model with temperature programmed hydrogen evolution experiments provides a powerful method for characterizing the energetics, trap concentrations and diffusivity of hydrogen in a-Si:H.

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References

  1. Zellama, K., P. Germain, and S.Squelard, Physical Review B 23, 6648, (1981).

    Article  CAS  Google Scholar 

  2. Jackson, W.B., C.C.Tsai, and P.V. Santos, Mat. Res. Symp. Proc.Vol 258, 319, (1992).

    Article  CAS  Google Scholar 

  3. Kakalios, James, Semiconductors and Semimetals 34, 381, (1987).

    Article  Google Scholar 

  4. Zafar, Sufi and E.A.Schiff, Mat. Res. Symp. Proc. Vol 258, 199, (1992).

    Article  CAS  Google Scholar 

  5. Nakamura, Minora and Yutaka Misawa, J. Appl. Phys. 68(3), 1005, (1990).

    Article  CAS  Google Scholar 

  6. Jackson, W.B., S.B. Zhang, C.C.Tsai, and C. Donald, AIP Conf. Proceedings, 37, 1991.

  7. Branz, H. M., S. E. Asher, and B. P. Nelson, AIP Conference Proceedings 268, 138, (1992).

    Article  CAS  Google Scholar 

  8. Santos, Paulo V., and Warren B. Jackson, Physical Review B 46(8), 4595, (1992).

    Article  CAS  Google Scholar 

  9. Brzoska, K.D. and C.H.Kleint, Thin Solid Films 34, 131, (1979).

    Article  Google Scholar 

  10. Beyer, W. and H. Wagner, J. Appl. Phys. 53(12), 8745, (1982).

    Article  CAS  Google Scholar 

  11. Jackson, W.B. and C.C.Tsai, Physical Review B 45(12), 6564, (1992).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Depts. of Chem. Engineering, University of Michigan, Ann Arbor, 48105, MI, USA

    A. J. Franzi, M. Mavrikakis, J. W. Schwank & J. L. Gland

  2. Chemistryl, University of Michigan, Ann Arbor, 48105, MI, USA

    J. L. Gland

Authors
  1. A. J. Franzi
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  2. M. Mavrikakis
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  3. J. W. Schwank
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  4. J. L. Gland
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Franzi, A.J., Mavrikakis, M., Schwank, J.W. et al. Transient Mean-Field Reaction-Diffusion Model Applied to Hydrogen Evolution From Hydrogenated Amorphous Silicon. MRS Online Proceedings Library 377, 325–330 (1995). https://doi.org/10.1557/PROC-377-325

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  • DOI: https://doi.org/10.1557/PROC-377-325

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