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Evidence for Electronic Energy Loss Processes Stimulating Solid Phase Epitaxial Regrowth of Spatially Isolated Amorphous Regions in Semiconductor Systems

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Abstract

Solid phase epitaxial regrowth of spatially isolated amorphous regions in Si, Ge and GaP has been stimulated by using an electron beam with energies in the range of 50 to 300 keV. In all materials, the rate at which the amorphous zones disappear decreases as the energy of the electron beam increases from 50 keV reaching a minimum below the threshold displacement voltage before it again increases with increasing electron energy. The experimental results are interpreted in terms of creation and motion of defects (dangling bonds, charged defects) along the amorphouscrystalline interface.

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Authors and Affiliations

  1. Dept. of Materials Science and Engineering, University of Illinois, 1304 W. Green St., Urbana, IL, 61801, USA

    I. Jencic & I. M. Robertson

  2. Dept. of Materials Science, University of Minnesota, Minneapolis, MN, 55455, USA

    M. W. Bench

  3. Argonne National Laboratory, Argonne, IL, 60439, USA

    M. A. Kirk

Authors
  1. I. Jencic
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  2. M. W. Bench
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  3. I. M. Robertson
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  4. M. A. Kirk
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Jencic, I., Bench, M.W., Robertson, I.M. et al. Evidence for Electronic Energy Loss Processes Stimulating Solid Phase Epitaxial Regrowth of Spatially Isolated Amorphous Regions in Semiconductor Systems. MRS Online Proceedings Library 373, 481–485 (1994). https://doi.org/10.1557/PROC-373-481

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  • DOI: https://doi.org/10.1557/PROC-373-481

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