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Improved Uniformity of Reacted GaAs Contacts by Interface Mixing

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Abstract

Ion beam mixing is used to produce more uniform Au. Au-Ge and Au-Ge-Ni reacted contacts to GaAs.

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Author information

Author notes

  1. M. J. Hollis

    Present address: MIT Lincoln Labs, Lexington, USA

Authors and Affiliations

  1. Materials Science and Engineering, Cornell University, Bard Hall, Ithaca, N.Y., 14853, USA

    C. J. Palmrøm & J. W. Mayer

  2. School of Electrical Enaineering, Cornell University, Phillips Hall, Ithaca, N.Y., 14853, USA

    K. L. Kavanagh, M. J. Hollis & S. D. Mukherjee

Authors
  1. C. J. Palmrøm
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  2. K. L. Kavanagh
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  3. M. J. Hollis
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  4. S. D. Mukherjee
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  5. J. W. Mayer
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Palmrøm, C.J., Kavanagh, K.L., Hollis, M.J. et al. Improved Uniformity of Reacted GaAs Contacts by Interface Mixing. MRS Online Proceedings Library 37, 473–478 (1984). https://doi.org/10.1557/PROC-37-473

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  • DOI: https://doi.org/10.1557/PROC-37-473

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