Nonhydrostatic Stress Effects on Solid Phase Epitaxial Growth in Silicon

Abstract

The dependence of solid phase epitaxial growth in Si on uniaxial compression applied perpendicular to the amorphous-crystal interface is investigated. Long, thin pure Si bars of square cross section are ion-implanted to produce amorphous layers on the end faces. The bars are placed end-to-end and uniaxially loaded at temperature to partially regrow the amorphous layers. The resulting growth rates are measured ex situ by re-heating the samples on a hot stage and using time-resolved reflectivity to deduce interface depths. Preliminary results are that uniaxial compression is more effective than hydrostatic pressure for enhancing the growth rate, in qualitative but not quantitative agreement with previously made predictions.