Abstract
A phenomenological lattice dynamics model has been developed that describes how strain affects phonon frequencies and elastic constants in Group IV and III-V semiconductor thin films and strained layers. Using this model, the phonon dispersion relations for strained-layer heterostructures of Ge and GaAs on Si have been obtained in the quasiharmonic approximation. This model uses available experimental data and can predict the effect of arbitrary strains on thin films.
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Eryigit, R., Sui, Z. & Herman, I.P. Lattice Properties of Ge and GaAs Strained-Layers on Si. MRS Online Proceedings Library 356, 295–300 (1994). https://doi.org/10.1557/PROC-356-295
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DOI: https://doi.org/10.1557/PROC-356-295