Abstract
Subboundaries are the major crystalline defects in thin semiconductor films produced by zone-melting recrystallization (ZMR). Using transmission electron microscopy (TEM) and chemical etching we have analyzed the angular discontinuity and defect structure of subboundaries in ZMR Si films. Annealing in oxygen has resulted in the elimination of dislocation bands from sizable regions of some films. Calculations suggest that cellular growth due to constitutional supercooling may not occur in some Si ZMR.
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Geis, M.W., Chen, C.K., Smith, H.I. et al. Characterization, Control, and Reduction of Subboundaries in Silicon on Insulators. MRS Online Proceedings Library 35, 575–582 (1984). https://doi.org/10.1557/PROC-35-575
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DOI: https://doi.org/10.1557/PROC-35-575