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Transmission Electron Microscopy of MOCVD Titanium Nitride Films

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Abstract

The effect of substrate temperature and process pressure on microstructure of MOCVD-TiN films deposited on oxidized Si substrates are studied by transmission electron microscopy (TEM). It is found that microstructure of MOCVD-TiN films distinctly changes with these deposition parameters and that the resistivity of the films is uniquely related to the microstructure. Films with the lowest resistivity (< 500 μohm-cm) show a uniform semi-columnar grain structure. Films with the highest resistivity (> 10,000 μohm-cm) show a uniform equi-axed micrograin structure. The other films exhibit a bi-layer structure: one layer of semi-columnar grains and the other of equiaxed micrograins. The thickness ratio of these layers changes with the deposition conditions and the resistivity is a unique function of the thickness of the semi-columnar grain layer.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA

    Toshio Itoh, Toyohiko J. Konno & Robert Sinclair

  2. Novellus Systems Inc., San Jose, CA, 95134, USA

    Ivo J. M. M. Raaijmakers & Bruce E. Roberts

Authors
  1. Toshio Itoh
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  2. Toyohiko J. Konno
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  3. Robert Sinclair
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  4. Ivo J. M. M. Raaijmakers
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  5. Bruce E. Roberts
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Itoh, T., Konno, T.J., Sinclair, R. et al. Transmission Electron Microscopy of MOCVD Titanium Nitride Films. MRS Online Proceedings Library 337, 735–740 (1994). https://doi.org/10.1557/PROC-337-735

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  • DOI: https://doi.org/10.1557/PROC-337-735

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