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Eutectic Bonding for Inducing In-Plane Strain in Gaas and Gaas/Algaas MQW Thin Films

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Abstract

We present a process for creating in-plane anisotropic strain in (100) GaAs and GaAs/AlGaAs multiple quantum well (MQW) thin films. The host substrates used for bonding include (100) GaAs, (100) silicon, and lithium tantalate (LiTaO3) with a special crystalline orientation. A mutilayer metallization consisting of Au-Sn (Au: 80 wt%, Sn: 20 wt%, 0.95μm), Ti (500Å) adhesion layer and Pt (500Å) barrier layer is deposited on the thin films and the host substrates. By choosing a proper annealing temperature (380°C) and thickness of eutectic layer, the thin films and the substrates are bonded together. Photoluminescence measurements do not reveal any thermally induced strain in the thin films bonded to GaAs; however, they show the existence of in-plane biaxial strain in the films bonded on Si. Linearly polarized reflectance measurements reveal an optical anisotropy in the MQW bonded to LiTaO3, which possesses an orientation-dependent thermal expansion. This indicates that the in-plane strain in the thin films is induced by the different thermal expansions between the thin films and the substrates. This process can be used to develop a new class of devices with an artificially induced in-plane strain.

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Author notes

  1. H. Shen

    Present address: Geo Centers, Inc., Lake Hopatcong, New Jersey, 07849, USA

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Rutgers University, New Jersey, 08855-0909, USA

    Y. Lu, H. C. Kuo & C. H. Lin

  2. U.S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey, 07703-5601, USA

    H. Shen, M. Wraback, J. Pamulapati, M. Taysing-Lara & M. Dutta

  3. AT&T Bell Laboratory, 600 Mountain Avenue, Murray Hill, NJ, 07974-2070, USA

    F. Ren & J. M. Kuo

Authors
  1. Y. Lu
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  2. H. C. Kuo
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  3. C. H. Lin
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  4. H. Shen
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  5. F. Ren
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  6. M. Wraback
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  7. J. Pamulapati
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  8. M. Taysing-Lara
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  9. M. Dutta
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  10. J. M. Kuo
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Lu, Y., Kuo, H.C., Lin, C.H. et al. Eutectic Bonding for Inducing In-Plane Strain in Gaas and Gaas/Algaas MQW Thin Films. MRS Online Proceedings Library 337, 607–612 (1994). https://doi.org/10.1557/PROC-337-607

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  • DOI: https://doi.org/10.1557/PROC-337-607

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