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In-Situ Tem Observation of Interfacial Reactions in the Zr/Si System

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Abstract

The interfacial reactions in the Zr/Si system were studied by in-situ cross-section TEM including high resolution mode. The reactions consisted of formation of an amorphous interlayer followed by the nucleation and growth of crystalline ZrSi2- The development of the amorphous layer was found to involve two different stages. The ZrSi2 was also found to grow layer-by-layer into the Si via a ledge mechanism.

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Author notes

  1. Toyohiko J. Konno

    Present address: Institute for Materials Research, Tohoku University, Sendai, 980, Japan

Authors and Affiliations

  1. Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305-2205, USA

    Hiroyuki Tanaka, Toyohiko J. Konno & Robert Sinclair

Authors
  1. Hiroyuki Tanaka
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  2. Toyohiko J. Konno
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  3. Robert Sinclair
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Tanaka, H., Konno, T.J. & Sinclair, R. In-Situ Tem Observation of Interfacial Reactions in the Zr/Si System. MRS Online Proceedings Library 337, 481–485 (1994). https://doi.org/10.1557/PROC-337-481

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  • DOI: https://doi.org/10.1557/PROC-337-481

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