Abstract
The effect of heat treatments between 400°C and 500°C on electrical contacts of In, Ga, Pb, and AU to n- or p-GaAs, and Ni to n-GaAs have been studied using current-voltage (I-V), Auger electron spectroscopy and scanning electron microscopy. Ohmic contacts were formed between In and GaAs upon heating due to formation of an InGaAs surface layer with low interfacial transport barriers. The contacts between Ga or Pb and n- and p-GaAs remained rectifying due to a lack of interfacial reaction. Films of Au reacted with both n-and p-type GaAs resulting in rectangular “pits”. This led to ohmic contacts only on n-type substrates due to segregation of the Si dopants to the surface of the decomposed GaAs "pits". Dopant segregation did not occur when Au reacted with p-GaAs or Ni reacted with n-GaAs, thus these contacts remained rectifying at lower doping densities (4 x 1017 cm-3).
Similar content being viewed by others
References
T.C. Shen, G.B. Gao and H. Morkoc, J. Vac. Sci. Technol. B10, 2113 (1992).
See chapters 1,2 and 6 in Contacts to Semiconductors. Fundamentals and Technology, Ed. by L.J. Brillson (Noyes Publ., New York, 1993).
P.H. Holloway, Lu-Min Yeh Liu, H. David Powell and Alan Brown, Appl. Phys. Lett. 59, 947 (1991).
S.M. Sze. Physics of Semiconductor Devices, Second Edition (John Wiley and Sons, New York, 1981).
Lu-Min Yeh Liu, Metallurgical and Electrical Properties of Au/GaAs Electrical Contacts, PhD Dissertation, University of Florida, 1988.
J.L. Freeouf, A.C. Warren, P.D. Kirchner, J.M. Woodall and M.R. Melloch, J. Vac. Sci. Technol. B9, 2355 (1991).
L.J. Vieland and S. Skalsi in Metallurgy of Elemental and Compound Semiconductors, edited by R.O. Grubal (Interscience, New York, 1961) p.303.
J.S. Solomon and S.R. Smith, J. Vac. Sci. Technol. A5, 1809 (1987).
S.A. Chambers and V.A. Loebs, Appl. Phys. Lett. 60, 38 (1992).
ASM Handbook: Alloy Phase Diagrams, Volume 3, Edited by H. Baker (ASM International, Metals Park, OH, 1992).
Lu-Min Yeh Liu and P.H. Holloway, Mat. Res. Soc. Symp. Proc. Vol. 144, p. 607 (1989).
C.M. Mueller, P.H. Holloway and R.G. Connell, in Advanced Metallization and Processing of Semiconductor Devices, Ed. by A. Katz, Y.I. Nissim, S.P. Murarka and J.M.E. Harper (MRS, Pittsburgh, PA, 1992) Vol. 260, p. 481.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Fischer, V., Viljoen, P.E., Ristolainen, E. et al. The Effects of Interfacial Reactions in the Formation of Ohmic Contacts to GaAs. MRS Online Proceedings Library 337, 413–419 (1994). https://doi.org/10.1557/PROC-337-413
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-337-413