Growth of MHSe, Cd_1−xMn_xSe, and Mn8_1−xSe_x Films by Molecular Bean Epitaxy (MBE) and Elemental Vapor Transport Epitaxy (EVTE) Techniques.

Abstract

This work addressed the MBE and EVTE growth of wide band gap semiconductor materials such as MnSe, Cd_1−xMn_xSe, and MnS_1−xSe_x which have potential application for blue-green light emitters. It is the first time that EVTE was applied for high (Se, S, Cd) and low (Mn) vapor pressure materials, which required modification of the conventional design. The films were grown on GaAs 2⁰ off (100) substrates and characterized using optical microscopy, SEM, EDS, X-ray, SIMS, Hall, and sheet resistance measurements. The deposition process parameters will be reviewed and related to results such as film composition, surface morphology, uniformity, and crystallinity. We report on growth of Cd_1−xMn_xSe with 0.42<X<0.99 and MnS_1−xSe_x with 0.58<X<0.67. Different methods of controling elemental composition will be discussed. Grown materials show good surface morphlogy and uniformity. SIMS analysis demonstrated stable elemental composition throughout the film thickness and a sharp interface with the substrate.