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Near Interface Oxide Degradation in High Temperature Annealed Si/SiO2/Si Structures

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Abstract

Degradation of 430 nm thick SiO2 layers in Si/SiO2/Si structures which results from high temperature annealing (1320°C) has been studied using electron spin resonance, infra-red absorption spectroscopy and refractive index measurements. Large numbers of oxygenvacancies are found in a region ≤ 100 nm from each Si/SiO2 interface. Two types of paramagnetic defects are observed following γ or X-irradiation or hole injection. The 1106 cm−1 infra-red absorption associated with O interstitials in the Si substrate is found to increase with annealing time. The infra-red and spin resonance observations can be explained qualitatively and quantitatively in terms of a model in which oxygen atoms are gettered from the oxide into the under or overlying Si, the driving force being the increased O solubility limit associated with the anneal temperature.

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References

  1. R. Tromp, G. W. Rubloff, P. Balk, F. K. LeGoues and E. J. van Loenen, Phys. Rev. Letts. 55 2332 (1985)

    Article  CAS  Google Scholar 

  2. M. Liehr, J. E. Lewis and G. W. Rubloff, J. Vac. Sci. Tech. A5 1559 (1987)

    Article  Google Scholar 

  3. G. W. Rubloff, Mat. Res. Soc. Symp. Proc. 105 11 (1988)

    Article  CAS  Google Scholar 

  4. J. R. Schwank and D. M. Fleetwood, Appl. Phys. Lett. 53 770 (1988)

    Article  Google Scholar 

  5. D. M. Fleetwood and J. H. Scofield, Phys. Rev. Letts. 64 579 (1990)

    Article  CAS  Google Scholar 

  6. F. M. d’Heurle, Electrochem. Soc. Ext. Abstr. 90-2 446 (1990)

    Google Scholar 

  7. F. J. Feigl, W. B. Fowler and K. L. Yip, Sol. State Commun. 14 225 (1974)

    Article  CAS  Google Scholar 

  8. K. H. Vanheusden and A. Stesmans, J. Appl. Phys. 74 275 (1993); W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur and R. A. B. Devine, Appl. Phys. Lett. 62 3330 (1993)

    Article  CAS  Google Scholar 

  9. J-L. Leray, J. Margail and R. A. B. Devine, Mat. Sci. Eng. B12 153 (1992)

    Article  CAS  Google Scholar 

  10. H. J. Hrostowski and R. H. Kaiser, Phys. Rev. 107 966 (1957)

    Article  CAS  Google Scholar 

  11. M. Stavola, J. R. Patel, L. C. Kimmerling and P. C. Freeland, Appl. Phys. Lett. 42 73 (1983)

    Article  CAS  Google Scholar 

  12. J. C. Mikkelsen Jr., Appl. Phys. Lett. 45 1187 (1984)

    Article  CAS  Google Scholar 

  13. R. A. B. Devine, D. Mathiot, W. L. Warren, D. M. Fleetwood and B. Aspar, Appl. Phys. Lett. (in press, November 1993)

  14. R. C. Newman and J. B. Willis, J. Phys. Chem. Solids 26 373 (1965)

    Article  CAS  Google Scholar 

  15. R. A. B. Devine, W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood and B. Aspar, Nucl. Inst Meth. in Phys. Res. B (in press, 1993)

  16. A. Golanski, R. A. B. Devine and J-C. Oberlin, J. Appl. Phys. 56 1572 (1984)

    Article  CAS  Google Scholar 

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Acknowledgments

The authors gratefully acknowledge the help of Dr. J-L. Leray in X-irradiating the samples. The part of the work performed at Sandia National Laboratories was supported by the US Department of Energy under contract DE-AC04-93AL85000.

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Authors and Affiliations

  1. CNS-CNET France Télécom, BP 98, 38243, Meylan, France

    R. A. B. Devine & D. Mathiot

  2. Sandia National Laboratories, Albuquerque, New Mexico, 87185-5800, USA

    W. L. Warren & D. M. Fleetwood

Authors
  1. R. A. B. Devine
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  2. D. Mathiot
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  3. W. L. Warren
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  4. D. M. Fleetwood
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Devine, R.A.B., Mathiot, D., Warren, W.L. et al. Near Interface Oxide Degradation in High Temperature Annealed Si/SiO2/Si Structures. MRS Online Proceedings Library 318, 623–629 (1993). https://doi.org/10.1557/PROC-318-623

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