Abstract
Low energy Ar and Xe ion bombardment of Ge (001) produces large numbers of point defects on the Ge surface and in the near-surface regions. Defect concentrations on the surface are detected and quantified in real time during bombardment using in situ Reflection High Energy Electron Diffraction (RHEED). We report the energy dependence of the defect yield for 70–500 eV Ar and Xe ion bombardment, and the temperature dependence of the defect yield (defects/ion) during 200 eV ion bombardment. The defect yield drops rapidly as the substrate temperature during bombardment is varied from 175 Κ to 400 K. We attribute the yield reduction to surface recombination of adatoms and vacancies produced in the same collision cascade.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. E. Greene, CRC Critical Reviews in Solid State and Materials Science 2, 47 (1983).
C-H. Choi, R Ai, and S. A. Barnett, Phys. Rev. Lett. 67, 2826 (1991).
H. A. Atwater, C. J. Tsai, S. Nikzad, and M. V. R. Murty, in Interface Dynamics and Growth, K. S. Liang, M. P. Anderson, R. F. Bruinsma, and G. Scoles, eds. (Mater. Res. Soc. Symp. Proc. 237, Pittsburgh, PA, 1992).
J. A. Floro, Β. K. Kellerman, E. Chason, S. T. Picraux, D. K. Brice, and K. M. Horn, J. Appl. Phys. (submitted).
J. A. Kubby, J. E. Griffith, R. S. Becker, and J. S. Vickers, Phys. Rev. B 36, 6079 (1987).
E. Chason, J. Y. Tsao, K. M. Horn, and S. T., Picraux, J. Vac. Sci. Technol. B 7, 332 (1989).
J. M. van Hove, P. R. Pukite, P. I. Cohen, and C. S. Lent, J. Vac. Sci. Technol. A 4, 1251 (1989).
D. K. Brice, J. Y. Tsao, and S. T. Picraux, Nucl. Instr. & Meth. B44, 68 (1989)).
Y. Chen and J. W. MacKay, Phil. Mag. 19, 357 (1969).
J. L. Vossen and J. J. Cuomo, in Thin Film Processes, John. L Vossen and Werner. Kern, eds. (Academic Press, New York, 1978), p. 17.
A. Seeger and K. P. Chik, Phys. Stat. Solidi 29, 455 (1968).
E. Chason, J. Y. Tsao, K. M. Horn, S. T. Picraux and H. A. Atwater, J. Vac. Sci. Technol. A 8, 2507 (1990).
E. Chason, P. Bedrossian, K. M. Horn, J. Y. Tsao, and S. T. Picraux, Appl. Phys. Lett. 57, 1793 (1990).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Floro, J.A., Kellerman, B.K., Chason, E. et al. Intra-Cascade Surface Recombination of Point Defects During Ion Bombardment of Ge (001). MRS Online Proceedings Library 316, 993–998 (1993). https://doi.org/10.1557/PROC-316-993
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-316-993