Abstract
The time/temperature dependencies of the surface roughness, subsurface extended defect formation, and minority-carrier lifetime are reported for n-type (100) silicon wafers exposed to a hydrogen ion beam. Surface roughness is assessed from atomic force microscopy, the distribution and nature of extended defects are determined from transmission electron microscopy, and the minority-carrier lifetime is evaluated by a non-contact laser-microwave technique. The surface roughness exhibits a weak dependence on ion-beam exposure time for the temperature range studied, whereas the distribution of extended defects may depend on exposure time at a given wafer temperature. The surface and bulk components of the minority-carrier lifetimes are consistent with these surface and subsurface properties. Transmission electron microscopy analyses demonstrate that the associated strain field of the extended defects is compressive in nature.
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Acknowledgment
This work is supported by the North Carolina State University NSF Engineering Research Center for Advanced Electronic Materials Processing (Contract CDR-8721505). The authors would especially like to thank the Microelectronics Center of North Carolina for providing analytical facilities.
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Liu, H.X., Schneider, T.P., Montgomery, J. et al. A Study of Surface and Subsurface Properties of Si (100) After Hydrogen Ion-Beam Exposure. MRS Online Proceedings Library 315, 231–236 (1993). https://doi.org/10.1557/PROC-315-231
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DOI: https://doi.org/10.1557/PROC-315-231