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Fundamentals of Semiconductor Detectors for Ionizing Radiation

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Abstract

The modes of operation of semiconductor detectors are reviewed, together with the influence of charge carrier collection in developing a signal pulse for spectroscopic applications. Because of the importance of charge trapping in many semiconductors of interest in the fabrication of room temperature radiation detectors, the effects of incomplete charge collection are quantified. Calculated results are presented for the expected pulse height and energy resolution under a variety of charge collection conditions.

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Acknowledgments

We wish to recognize and thank Ronald Rojeski for his contributions to the presented work. We acknowledge the support of the U.S. Department of Energy through contract number 9-XG2-Y0173-1.

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Authors and Affiliations

  1. The Department of Nuclear Engineering, University of Michigan, Ann Arbor, MI, 48109-2104, USA

    G.F. Knoll & D.S. McGregor

Authors
  1. G.F. Knoll
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  2. D.S. McGregor
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Knoll, G., McGregor, D. Fundamentals of Semiconductor Detectors for Ionizing Radiation. MRS Online Proceedings Library 302, 3–17 (1993). https://doi.org/10.1557/PROC-302-3

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  • DOI: https://doi.org/10.1557/PROC-302-3

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