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The Effects of Elemental Sequence and Pairing on Interdiffusion and Phase Formation of Al-Ge-Ni Ohmic Contacts for (001) GaAs

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Abstract

The growth sequence of Al, Ge, and Ni metals has been shown to dramatically affect the amount of heat treatment time required to convert the ohmic contact metallization from Schottky to ohmic behavior. Interpretation of inter/diffusion and phase formation of the Al-Ge, Al-Ni, or Ni-Ge thin film couples were measured. Auger depth profiles and thin film X-ray diffraction were used to determine interdiffusion and phase formation resulting from various types of thermal processing. The effects of interdiffusion and formation of phases such as Ni-Ga, Ni-As, Ni-Ga-Ge, and Ni-As-Ge from the two element metallizations on GaAs will be used to explain the origin of ohmic behavior for the ternary Al-Ge-Ni contacts to GaAs.

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Authors and Affiliations

  1. The Materials Directorate of Wright Laboratory, Wright-Patterson Air Force Base, Ohio, 45433-7750, USA

    W. V. Lampert & T. W. Haas

  2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida, 32611-2066, USA

    Paul H. Holloway

Authors
  1. W. V. Lampert
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  2. T. W. Haas
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  3. Paul H. Holloway
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Lampert, W.V., Haas, T.W. & Holloway, P.H. The Effects of Elemental Sequence and Pairing on Interdiffusion and Phase Formation of Al-Ge-Ni Ohmic Contacts for (001) GaAs. MRS Online Proceedings Library 300, 261–266 (1993). https://doi.org/10.1557/PROC-300-261

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  • DOI: https://doi.org/10.1557/PROC-300-261

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