Abstract
We report the electronic properties, stability and microstructure of a-Si:H films grown at very high substrate temperature (Ts = 320~425°C) by DC reactive magnetron sputtering (RMS). The partial pressures of Ar and H2 are fixed at 1.5 and 0.8 mT, respectively, during the deposition. The initial defect state density, determined by the constant photocurrent method (CPM), varies from 2~5×l015 cm−3 with H content changing from 15–10 at.% as TS increases from 320–375°C. For 100 hrs white light exposure at 1W/cm2, a heavily degraded state was obtained with mid-gap state density in the range 2–3×1016cm−3 over this TS range. These are among the lowest values reported for intrinsic a-Si:H.
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Acknowledgments
The authors would like to thank D.L. Williamson, Y. Chen and S.J. Jones for the SAXS measurements, S. Wagner and N. Wang for intense light soaking studies, F. Yang and J. Doyle for valuable discussions. This work is supported by Electric Power Research Institute under contract RP 3120-01.
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Liang, Y., Maley, N. & Abelson, J. High Substrate Temperature a-Si:H Grown by DC Reactive Magnetron Sputtering. MRS Online Proceedings Library 297, 145–150 (1993). https://doi.org/10.1557/PROC-297-145
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DOI: https://doi.org/10.1557/PROC-297-145