Abstract
We propose a model for laser-induced chemical vapor deposition in which the growth of hydrogenated amorphous silicon (a-Si:H) thin films is rate-controlled by the gas phase homogeneous thermal dissociation of SiH4. The gas temperature is determined by a steady-state balance between energy absorbed from the laser and energy lost by thermal conduction. The film properties are primarily controlled by the substrate temperature.
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Materials Research Society Symposia Proceedings, Laser Diagnostics and Photochemical Processing for Semiconductor Devices, 17, R. M. Osgood, S. R. J. Brueck and H. R. Schlossberg, eds. (North Holland 1983).
C. P. Christensen and K. M. Lakin, Appl. Phys. Lett., 32, 254 (1978).
M. Hanabusa, A. Namiki, K. Yoshihara, Appl. Phys. Lett., 35. 626 (1979).
T. R. Gattuso, M. Meunier, D. Adler and J. S. Haggerty in: Materials Research Society Symposia Proceedings, Laser Diagnostics and Photochemical Processing for Semiconductor Devices, 17, R. M. Osgood, S. R. G. Brueck and H. R. Schlossberg, eds. (North Holland 1983) pp. 215–22.
M. Meunier, T. R. Gattuso, D. Adler and J. S. Haggerty, Appl. Phys. Lett., 43, 273–5 (1983).
R. Bilenchi, I. Gianinoni and M. Musci, J. Appl. Phys., 53, 6479–81 (1982).
B. A. Scott, R. M. Plecenik and E. E. Simonyi, Appl. Phys. Lett., 39, 73 (1981).
M. Meunier, J. H. Flint, D. Adler and J. S. Haggerty in: Proceedings of the 10th International Conference on Liquid and Amorphous Semiconductors, Tokyo 1983, J. Non. Cryst. Solids, (in press).
S. Hasegawa, T. Kasajima and T. Shimizu, Phil. Mag., B, 43, 149–56 (1981).
P. Hey and B. O. Seraphin, Solar Energy Materials, 8, 215–30 (1982).
B. A. Scott, J. A. Reimer, R. M. Plecenik, E. E. Simonyi and W. Reute, Appl. Phys. Lett., 40, 973 (1982).
H. Fritzsche, Sol. En. Mat., 3, 447–501 (1980).
P. A. Longeway and F. W. Lampe, J. Am. Chem. Soc., 103, 6813–8 (1981).
R. D. Levine and R. B. Bernstein, Molecular Radiation Dynamics (Oxford University Press, NY Chap. 5, 1974).
See for example Arpaci, Conduction Heat Transfer, (Addison-Wesley, Reading, MA 1966).
J. W. C. Johns and W. A. Kreiner, J. Mol. Spec, 60, 400–11 (1976).
A. C. G. Mitchell and M. W. Zemansky, Resonance Radiation and Excited Atoms, (Cambridge University Press, Cambridge, U. K. 1961).
C. G. Newman, H. E. O’Neal, M. A. Ring, F. Leska and N. Shipley, Int. J. Chem. Kinetics, 11, 1167 (1979).
K. J. Sladek, J. Electrochemical Soc., 118, 654 (1971).
A. M. Beers and J. Bloem, Appl. Phys. Lett., 41, 153 (1982).
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Meunier, M., Flint, J.H., Adler, D. et al. A Model for the Laser-Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon. MRS Online Proceedings Library 29, 397–402 (1983). https://doi.org/10.1557/PROC-29-397
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DOI: https://doi.org/10.1557/PROC-29-397